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DERIVATIZATION OF PHOTOACTIVE STRUCTURES SI(N+)/SI(P)/SI(P+) THROUGH ION-BEAM CRYSTALLIZATION

https://doi.org/10.12737/1283

Abstract

The physical and mathematical mass-transfer model of the ion-beam crystallization method is developed. The derivatization of photoactive structures Si(n+)/Si(p)/Si(p+) on 100 mm substrates through ion-beam crystallization is considered. The optimum conditions for the process: residual pressure in the growth chamber — 10−4 Pa; the substrate temperature — 550 °C; ion current density — 2 mA/cm2; acceleration voltage — 400 V; target — substrate distance — 150 mm are determined. The scanning electron microscopy data show that the grown photoactive structures have closely a faultless surface. The results demonstrate that the photoactive structures Si(n+)/Si(p)/Si(p+) offer the external quantum efficiency over 90 % in the wavelength range of 550—900 nm (spectrum AM 1.5) under the following conditions: front layer thickness Si(n+) — 100 nm; donor doping density n+ = 51018 cm−3; layer thickness Si(p) — 130 μm; acceptor doping density p = 21016 cm−3; layer thickness Si(p+) — 500 nm; acceptor doping density p+ = 11018 cm−3.

About the Authors

V. N. Varavka
Don State Technical University, Russia
Russian Federation


S. N. Chebotarev
Southern Scientific Centre of Russian Academy of Sciences, Russia
Russian Federation


A. S. Pashchenko
Southern Scientific Centre of Russian Academy of Sciences, Russia
Russian Federation


V. A. Irkha
Special Design-Engineering Bureau “Inversiya” LLC, Russia
Russian Federation


References

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Review

For citations:


Varavka V.N., Chebotarev S.N., Pashchenko A.S., Irkha V.A. DERIVATIZATION OF PHOTOACTIVE STRUCTURES SI(N+)/SI(P)/SI(P+) THROUGH ION-BEAM CRYSTALLIZATION. Vestnik of Don State Technical University. 2013;13(5-6):77-84. (In Russ.) https://doi.org/10.12737/1283

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